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kw.\*:("Méthode PVT")

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Results 1 to 25 of 59

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Computational modeling of the low supersaturation nucleation in crystal growth by contactless physical vapor transportGRASZA, K.Journal of crystal growth. 1998, Vol 193, Num 3, pp 426-429, issn 0022-0248Article

Observation of polytype stability in different-impurities-doped 6H-SiC crystalsSHENGHUANG LIN; ZHIMING CHEN; YUAN MA et al.Diamond and related materials. 2011, Vol 20, Num 4, pp 516-519, issn 0925-9635, 4 p.Article

Thermodynamic analysis of SiC polytype growth by physical vapor transport methodKAKIMOTO, K; GAO, B; SHIRAMOMO, T et al.Journal of crystal growth. 2011, Vol 324, Num 1, pp 78-81, issn 0022-0248, 4 p.Article

Characterization of bulk AlN with low oxygen contentBICKERMANN, M; EPELBAUM, B. M; WINNACKER, A et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 432-442, issn 0022-0248, 11 p.Article

Investigation of mass transport during PVT growth of SiC by 13C labeling of source materialHERRO, Z. G; WELLMANN, P. J; PÜSCHE, R et al.Journal of crystal growth. 2003, Vol 258, Num 3-4, pp 261-267, issn 0022-0248, 7 p.Article

Local epitaxy and lateral epitaxial overgrowth of SiCKHLEBNIKOV, Y; KHLEBNIKOV, I; PARKER, M et al.Journal of crystal growth. 2001, Vol 233, Num 1-2, pp 112-120, issn 0022-0248Article

Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbideVETTER, W. M; DUDLEY, M.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2001, Vol 81, Num 12, pp 2885-2902, issn 1364-2804, 18 p.Article

Evaluation of ZnO substrates for homoepitaxyWENISCH, H; KIRCHNER, V; HONG, S. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 944-949, issn 0022-0248Conference Paper

Rapid enlargement of SiC single crystal using a cone-shaped platformBAHNG, W; KITOU, Y; NISHIZAWA, S et al.Journal of crystal growth. 2000, Vol 209, Num 4, pp 767-772, issn 0022-0248Article

Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVTSELDER, M; KADINSKI, L; MAKAROV, Yu et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 333-338, issn 0022-0248Conference Paper

Isotopically pure ZnSe crystals grown from the vaporLAUCK, R; SCHÖNHERR, E.Journal of crystal growth. 1999, Vol 197, Num 3, pp 513-516, issn 0022-0248Conference Paper

Thermodynamic analysis of urea physical vapour transportPAORICI, C; ZHA, M; ZANOTTI, L et al.Crystal research and technology (1979). 1995, Vol 30, Num 5, pp 667-675, issn 0232-1300Article

Photoluminescence of vapor and solution grown ZnTe single crystalsBIAO, Y; AZOULAY, M; GEORGE, M. A et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 219-224, issn 0022-0248Conference Paper

Physical properties of Bi2Te3 and Sb2Te3 films deposited by close space vapor transportVIGIL-GALAN, O; CRUZ-GANDARILLA, F; FANDINO, J et al.Semiconductor science and technology. 2009, Vol 24, Num 2, issn 0268-1242, 025025.1-025025.6Article

Size control of ZnO nanostructures formed in different temperature zones by varying Ar flow rate with tunable optical propertiesMANZOOR, Umair; DO KYUNG KIM.Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 3, pp 500-505, issn 1386-9477, 6 p.Article

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystalsOHTANI, Noboru; KATSUNO, Masakazu; TSUGE, Hiroshi et al.Journal of crystal growth. 2006, Vol 286, Num 1, pp 55-60, issn 0022-0248, 6 p.Article

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (1120) surfaceKATSUNO, Masakazu; OHTANI, Noboru; FUJIMOTO, Tatsuo et al.Journal of electronic materials. 2005, Vol 34, Num 1, pp 91-95, issn 0361-5235, 5 p.Article

Self-congruent process of SiC growth by physical vapor transportCHEREDNICHENKO, D. I; DRACHEV, R. V; SUDARSHAN, T. S et al.Journal of crystal growth. 2004, Vol 262, Num 1-4, pp 175-181, issn 0022-0248, 7 p.Article

Effects of induction heating on temperature distribution and growth rate in large-size SiC growth systemCHEN, Q.-S; GAO, P; HU, W. R et al.Journal of crystal growth. 2004, Vol 266, Num 1-3, pp 320-326, issn 0022-0248, 7 p.Conference Paper

Growth of undoped and chromium-doped CdSxSe1-x crystals by the physical vapor transport methodROY, U. N; CUI, Y; BARNETT, C et al.Journal of electronic materials. 2002, Vol 31, Num 7, pp 791-794, issn 0361-5235Conference Paper

Growth and characterization of high-purity SiC single crystalsAUGUSTINE, G; BALAKRISHNA, V; BRANDT, C. D et al.Journal of crystal growth. 2000, Vol 211, Num 1-4, pp 339-342, issn 0022-0248Conference Paper

Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transportSEOYONG HA; NUHFER, N. T; ROHRER, G. S et al.Journal of electronic materials. 2000, Vol 29, Num 7, pp L5-L8, issn 0361-5235Conference Paper

Heat transfer in a furnace used for the growth of ZnSe via PVT and CVTREHSE, U; MILLER, W; BÖTTCHER, K et al.International conference on advanced computational methods in heat transfer. 1998, pp 503-510, isbn 1-85312-591-1Conference Paper

Mass flux of ZnSe1-xSx and ZnSe1-xTex by physical vapor transportSHA, Y.-G; SU, C.-H; LEHOCZKY, S. L et al.Journal of crystal growth. 1997, Vol 171, Num 3-4, pp 516-524, issn 0022-0248Article

SrS single crystals grown by physical vapor transportHELBING, R; FEIGELSON, R. S.Journal of crystal growth. 1994, Vol 138, Num 1-4, issn 0022-0248, 1075Conference Paper

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